| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| PI3EQX1002BZLEX |
|
接口IC |
DIODES/美台 |
TQFN-30 |
2102+ |
35000 |
||
| K4G41325FE-HC28 | FLASH存储器 |
SAMSUNG/三星 |
BGA |
19+ |
384 |
|||
| DS80PCI402SQ/NOPB |
|
接口IC |
TI/德州仪器 |
WQFN-54 |
2127+ |
18000 |
||
| H56C8H24AIR-S2C | DDR存储器 |
SKHYNIX/海力士 |
BGA |
22+ |
780 |
|||
| ISL95808HRZ-TS2778 |
|
电源IC |
RENESAS/瑞萨 |
DFN-8 |
21+ |
102000 |
||
| SPC56EL60L5CBFQR |
|
32位MCU |
ST/意法 |
LQFP-144 |
22+ |
780 |
||
| TPS22914BYFPR |
|
其他IC |
TI/德州仪器 |
DSBGA4 |
21+19+ |
450000 |
||
| ISL95880HRTZ-TS2778 |
|
电源IC |
RENESAS/瑞萨 |
QFN48 |
2040+ |
8000 |
||
| IKW25N120T2 | IGBT管 |
INFINEON/英飞凌 |
TO-247 |
24+ |
5000 |
|||
| IKW50N60T | IGBT管 |
INFINEON/英飞凌 |
TO-247 |
24+ |
5000 |
|||
| K3KL9L90CM-MGCT |
|
DDR存储器 |
SAMSUNG/三星 |
BGA |
23+ |
797 |
||
| ISL9238HRTZ-T |
|
充电IC |
RENESAS/瑞萨 |
TQFN-32 |
2116+ |
12000 |
||
| PI3EQX16621ZLDEX | 接口IC |
DIODES/美台 |
TQFN-40 |
2028+ |
13262 |
|||
| K4F6E3S4HM-GFCL | DDR存储器 |
SAMSUNG/三星 |
BGA |
1804+ |
39 |
|||
| K4F6E3S4HM-GHCL | DDR存储器 |
SAMSUNG/三星 |
BGA |
1828+ |
381 |
|||
| H56C8H24MJR-S0C | 存储IC |
SKHYNIX/海力士 |
BGA |
1830+ |
80 |
|||
| KLMBG4GEUF-B04Q | 存储IC |
SAMSUNG/三星 |
BGA |
1816+ |
50 |
|||
| USB2514BI-AEZG-TR | 接口IC |
MICROCHIP/微芯 |
QFN-36 |
22+ |
3000 |
|||
| MT29F1G08ABAEAWP:E | 内存芯片 |
MICRON/美光 |
TSOP48 |
17+ |
263 |
|||
| SPC56EL70L5CBFSR |
|
32位MCU |
ST/意法 |
LQFP-144 |
22+ |
240 |
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